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   COLLOQUIUM OF THE LABORATORY FOR COMPUTER DESIGN OF MATERIALS
                   School of Computational Sciences
                           (CSI 898-Sec 001)
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                 Concepts in Spin-Polarized Transport

                               Igor Zutic
              Center for Computational Materials Science, 
               Naval Research Laboratory,Washington DC

Spin-polarized transport and the related field of spintronics rely on lifting
of spin degeneracy in various physical properties [1]. A different behavior
for "spin up" and "spin down" in metallic magnetic structures has been shown
to lead to large magnetoresistive effects which were successfully
applied to computer hard drives and nonvolatile magnetic random
access memory. On the other hand, recent materials progress in semiconductors
has opened a possibility to consider novel effects in spin-polarized transport
which rely on nonlinear current-voltage characteristics, large deviation
from local charge neutrality, and inhomogeneously doped structures.
I will focus on the case of bipolar spin-polarized transport in which
both electrons and holes contribute and I will discuss some of our
predictions for a spin-polarized solar battery, for a spin-voltaic effect,
and for new ferromagnetic semiconductors [2].
                        
                        Monday , October 4, 2004
                                  4:30 pm
              Room 206, Science & Tech. I, Fairfax Campus

Refreshments will be served at 4:15 PM.
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Find the schedule at http://www.scs.gmu.edu/lcdm/seminar/schedule.html
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