Anindya Nath: Publications since 2015

13) Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, LE Luna, A Nath, AD Koehler, H Okumura, J Hu, Xu Zhang, X Gao, BN Feigelson, KD Hobart, T Palacios."Vertical GaN junction barrier Schottky rectifiers by selective ion implantation." IEEE Electron Device Letters 38(8), 1097-1100 (2017)

12)J Anderson, AD Koehler, MJ Tadjer, JK Hite, A Nath, NA Mahadik, O Aktas, V Odnoblyudov, C Basceri, KD Hobart, FJ Kub."Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates." Applied Physics Express 10(12), 126501 (2017)

11)AD Koehler, TJ Anderson, A Khachatrian, A Nath, MJ Tadjer, SP Buchner, KD Hobart, FJ Kub."High Voltage GaN Lateral Photoconductive Semiconductor Switches."ECS Journal of Solid State Science and Technology 6(11), S3099-S3102 (2017)

10) A. Nath, B.D.Kong, A.D. Koehler et al. "Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layer". Applied Physics Letters, 110, 013106 (2017).

9) J. C. Prestigiacomo, A. Nath, M. S. Osofsky et al. “Determining the nature of the gap in semiconducting graphene”. Scientific Reports, 7, 41713 (2017).

8) J. D. Greenlee, A. Nath et al. “NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices”. ECS Journal of Solid State Science and Technology, 6, 2, Q3067-Q3070 (2017).

7) A. D. Koehler, T. J. Anderson, M. J. Tadjer, A. Nath et al. “Vertical GaN Junction Barrier Schottky Diodes”. ECS Journal of Solid State Science and Technology, 6, 1, Q10-Q12 (2017).

6) K. M. Daniels, M. M. Jadidi, A. B. Sushkov, A. Nath et al. "Narrow Plasmonic Resonances Enabled by Quasi-Freestanding Bilayer Epitaxial Graphene". In press, 2D Materials.

5) K. Sridhara, B.N. Feigelson, J.A. Wollmershauser, J.K. Hite, A. Nath et al. “Electrochemically prepared polycrystalline copper surface for the growth of hexagonal boron nitride”. In press, Crystal Growth Design.

4) A. Nath, M. Currie, A.K. Boyd et al. “In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene-metal interface”. 2D Materials 3, 25013 (2016).

3) M. S. Osofsky, S. Hernandez, A. Nath et al. “Functionalized graphene as a model system for the two-dimensional metal-insulator transition”. Scientific Reports, 6, 19939 (2015).

2) A Parisini, M Gorni, A. Nath, L Belsito, MV Rao, R Nipoti. "Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC". Journal of Applied Physics, 118 (3), 035101(2015).

1) Z. R. Robinson, G. G. Jernigan, M. Currie, J. K. Hite, K. M Bussmann, L. O Nyakiti, N. Y Garces, A. Nath et al. "Challenges to graphene growth on SiC (000): Substrate effects, hydrogen etching and growth ambient". Carbon, 81 (73-82) (2015).

Patents

"Sub-micron laser patterning of graphene and 2D materials." M Currie, DK Gaskill, A Nath - US Patent 9,629,251, 2017.


Created in 2015.  Last update: February, 2017.


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