Created in 2017. Last update: January, 2019.
X Zhu, Q Li, DE Ioannou. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates. Chinese Physics Letters, 34(9), 097304 (2017).
H. Ye, E.C. Nallon, V.P. Schnee, C. Shi, H. Yuan, K. Jiang, K. Gu, S. Feng, H. Wang, Ch. Xiao, Qiliang Li. Optimization of the Transient Feature Analysis for Graphene Chemical Vapor Sensors: A Comprehensive Study, IEEE Sensors Journal 17 (19), 6350-6359 (2017).
S Yu, Q Rice, T Neupane, B Tabibi, Q Li, FJ Seo. Piezoelectricity enhancement and band structure modification of atomic defect-mediated MoS2 monolayer. Physical Chemistry Chemical Physics 19 (35), 24271-24275 (2017).
H Yuan, C Xiao, S Xiu, Y Wen, C Zhou, Q Li. A New Combined Vision Technique for Micro Aerial Vehicle Pose Estimation. Robotics 6 (2), 6 (2017).
K Gu, S Yu, K Eshun, H Yuan, H Ye, J Tang, DE Ioannou, C Xiao, H Wang, Qiliang Li. Two-dimensional hybrid layered materials: strain engineering on the band structure of MoS2/WSe2 hetero-multilayers. Nanotechnology 28 (36), 365202 (2017).
H Ye, EC Nallon, VP Schnee, C Shi, K Jiang, J Xu, S Feng, H Wang, Q Li. Enhance the discrimination precision of graphene gas sensors with a hidden Markov model. Analytical Chemistry 90 (22), pp 13790–13795 (2018).
H Yuan, C Xiao, S Xiu, W Zhan, Z Ye, F Zhang, C Zhou, Y Wen, Q Li. A hierarchical vision-based localization of rotor unmanned aerial vehicles for autonomous landing. International Journal of Distributed Sensor Networks 14 (9), 1550147718800655 (2018).
H Yuan, C Xiao, S Xiu, W Zhan, Z Ye, F Zhang, C Zhou, Y Wen, Q Li. A Hierarchical Vision-Based UAV Localization for an Open Landing. Electronics 7 (5), 68 (2018).
S Yu, Q Rice, B Tabibi, Q Li, FJ Seo, Piezoelectricity in WSe 2/MoS 2 Heterostructure Atomic Layers. Nanoscale 10, 12472-12479 (2018).
X Zhu, Q Li, DE Ioannou. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates. Chinese Physics Letters, 34(9), 097304 (2017).
H. Ye, E.C. Nallon, V.P. Schnee, C. Shi, H. Yuan, K. Jiang, K. Gu, S. Feng, H. Wang, Ch. Xiao, Qiliang Li. Optimization of the Transient Feature Analysis for Graphene Chemical Vapor Sensors: A Comprehensive Study, IEEE Sensors Journal 17 (19), 6350-6359 (2017).
S Yu, Q Rice, T Neupane, B Tabibi, Q Li, FJ Seo. Piezoelectricity enhancement and band structure modification of atomic defect-mediated MoS2 monolayer. Physical Chemistry Chemical Physics 19 (35), 24271-24275 (2017).
H Yuan, C Xiao, S Xiu, Y Wen, C Zhou, Q Li. A New Combined Vision Technique for Micro Aerial Vehicle Pose Estimation. Robotics 6 (2), 6 (2017).
K Gu, S Yu, K Eshun, H Yuan, H Ye, J Tang, DE Ioannou, C Xiao, H Wang, Qiliang Li. Two-dimensional hybrid layered materials: strain engineering on the band structure of MoS2/WSe2 hetero-multilayers. Nanotechnology 28 (36), 365202 (2017).
H Zhu, H Li, JWF Robertson, A Balijepalli, S Krylyuk, AV Davydov, Q. Li. Novel nanofluidic chemical cells based on self-assembled solid-state SiO2 nanotubes. Nanotechnology 28 (43), 435601 (2017).
EC Nallon, VP Schnee, Q Li. A New Type of Explosive Chemical Detector Based on an Organic Photovoltaic Cell. Electronics 6 (3), 55 (2017). C Shi, L Tian, S Feng, Q Li, H Wang. Design and optimization of collection efficiency and conversion gain of buried p-well SOI pixel X-ray detector. Electronics 6 (2), 26 (2017)
S. Yu, H. Zhu, K. Eshun, C. Shi, M. Zeng and Qiliang Li, "Strain-Engineering the Anisotropic Electrical Conductance in ReS2 monolayer," Appl. Phys. Lett. 108, 191901 (2016)
A. Arab, A. V. Davydov, D. A. Papaconstantopoulos and Qiliang Li, “Monolayer MoS2 Nanoribbons as a Promising Material for Both n-type and p-type Legs in Thermoelectric Generators,” Journal of Electronic Materials, doi:10.1007/s11664-016-4725-9 (2016)
H. Pang, F. Zhang, M. Zeng, X. Gao, M. Qin, X. Lu, J. Gao, J. Dai and Qiliang Li, “Preparation of epitaxial hexagonal YMnO3 thin films and observation of ferroelectric vortex domains,” NPJ Quantum Materials (2016) (in press)
E. Nallon, V. Schnee, C. Bright, M. Polcha and Qiliang Li, "Discrimination Enhancement with Transient Feature Analysis of a Graphene Chemical Sensor," Analytical Chemistry 88, page 1401-1406 (2016)
H. Yuan, G. Cheng, S. Yu, A. R. Hight Walker, C. A. Richter, M. Pan and Qiliang Li, “Field effects of current crowding in metal-MoS2 contacts” Appl. Phys. Lett. 108, 044608 (2016)
C. Liu , S. X. Lin , Minghui Qin , Xubing Lu , Xingsen Gao , Min Zeng, Qiliang Li , Jun-Ming Liu, "Energy storage and polarization switching kinetics of (001)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films," Appl. Phys. Lett. 108, 112903 (2016)
S. Pookpanratana, H. Zhu, E. G. Bittle, S. N. Natoli, T. Ren, C. A. Richter, Qiliang Li and C. A. Hacker, "Non-volatile memory devices with redox-active diruthenium molecular compound," Journal of Physics: Condense Matter 28, 094009 (7pp) (2016)
H. Zhu and Qiliang Li, "Novel Molecular Non-Volatile Memory: Application of Redox- Active Molecules," Appl. Sci. 6(1), 7 (2015)
H. Zhu, S. J. Pookpanratana, J. Bonevich, S. N. Natoli, C. A. Hacker, T. Ren, J. Suehle,
A. Richter and Qiliang Li, “Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Non-Volatile Memory Applications,” Appl. Mat. Interfaces 7, 27306-27313 (2015)
S. Yu, H. Zhu, K. Eshun, A. Arab, A. Badwan and Qiliang Li, “A computational study of the electronic properties of one-dimensional armchair phosphorene nanotubes,” J. Appl. Phys. 118, 164306 (2015)
D. Sharma, A. Motayed, P. B. Shah, M. Amani, M. Georgieva, A. G. Birdwell, M. Bubey, Qiliang Li and A. V. Davydov, “Transfer characteristics and low-frequency noise in single-and multi-layer MoS2 field-effect transistors,” Appl. Phys. Lett. 107, 162102 (2015)
A. Badwan, Qiliang Li and D. Ioannou, “On the Nature of the Memory Mechanism of Gated-Thyristor Dynamic-RAM Cells,” J. Electron Devices Society 3, 468-471 (2015)
A. Arab and Qiliang Li, "Anisotropic thermoelectric behavior in armchair and zigzag mono- and few-layer MoS2 in thermoelectric generator applications," Scientific Reports 5, 13706, page 1-12 (2015)
E. Nallon, V. Schnee, C. Bright, M. Polcha and Qiliang Li. “Chemical Discrimination with an Unmodified Graphene Chemical Sensor,” ACS Sensors 1, 26-31 (2015)
A. Z. Badwan, Z. Chbili, Qiliang Li, D. E. Ioannou, “SOI FED-SRAM Cell: Structure and Operation,” IEEE Trans. Electron Devices 62, 2865-2870 (2015)
S. Yu, K. Eshun, H. Zhu and Qiliang Li, “Novel two-dimensional mechano-electric generators and sensors,” Scientific Reports 5, 12854 (2015)
K. Eshun, H. D. Xiong, S. Yu and Qiliang Li, “Doping induces large variation in the electrical properties of MoS2 monolayers,” Solid-State Electronics 106, 44-49 (2015)
H. Yuan, G. Cheng, L. You, H. Li, H. Zhu, W. Li, J. Kopanski, Y. Obeng, A. Hight Walker, D. Gundlach, C. Richter, D. Ioannou and Qiliang Li, “Influence of Metal-MoS2 Interface on MoS2 Transistors Performance: a Comparison of Ag and Ti Contacts,” ACS Appl. Mat. Interfaces 7, 1180-1187 (2015)
H. Yuan, K. Zhang, H. Li, H. Zhu, J. E. Bonevich, H. Baumgart, C. A. Richter and Qiliang Li, “Polarization of Bi2Te3 Thin Film in a Floating-Gate Capacitor Structure,” Appl. Phys. Lett. 105, 233505 (2014)
S. Yu, H. Xiong, K. Eshun, H. Yuan and Qiliang Li, “Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain,” Appl. Surf. Sci. 325, 27- 32 (2014)
H. Yuan, A. Z. Badwan, C. A. Richter, H. Zhu, O. Kirillov, D. E. Ioannou and Qiliang Li, “Gate assisted Kelvin test structure to measure the electron and hole flows at the same nanowire contacts,” Appl. Phys. Lett. 105, 133513 (2014)
H. Li, H. Zhu, H. Yuan, L. You, C. A. Richter, J. J. Kopanski, E. Zhao and Qiliang Li et al., “SnTe Field Effect Transistors and the Anomalous Electrical Response of Structural Phase Transition,” Appl. Phys. Lett. 105, 013503 (2014)
H. Zhu, J. E. Bonevich, H. Li, C. A. Richter, H. Yuan, O. Kirillov and Qiliang Li et al., “Discrete Charge States in Nanowire Flash Memory with Multiple Ta2O5 Charge- trapping Stacks,” Appl. Phys. Lett. 104, 233504 (2014)
D. Sharma and Qiliang Li et al., “Effect of High-k Dielectric Passivation on Electrical Transport and Low-Frequency Noise in Single-layer MoS2 FETs,” Nanotechnology 25, 155702 (2014)
Qiliang Li et al., “Self-Assembled Nanowire Array Capacitors: Capacitance and Interface State Profile,” Nanotechnology 25, 135201 (2014)
D. Sharma, A. Motayed, S. Krylyuk, Qiliang Li and A. V. Davydov, “Detection of Deep-Levels in Doped Silicon Nanowires Using Low-Frequency Noise Spectroscopy,” IEEE Trans. Electron Devices 60, 4206 (2013)
H. Zhu and Qiliang Li et al., “Design and Fabrication of Ta2O5 Stacks for Discrete Multibit Memory Application” IEEE Trans. Nano. 12, 1151 (2013) Qiliang Li, H. Zhu, H. Yuan, O. Kirillov, D. Ioannou, J. Suehle, C. A. Richter, “A study of metal gates on HfO2 using Si nanowire field effect transistors as platform,” ECS Trans. 50 (4), 267-271 (2013)
H. Zhu, C. A. Hacker, S. J. Pookpanrafana, C. A. Richter, H. Yuan, H. Li, O. Kirillov, E. Ioannou and Qiliang Li, “Non-volatile memory with self-assembled ferrocene charge trapping layer”’ Appl. Phys. Lett. 103, 053102 (2013)
W. Li, Y. Liang, D. Yu, L. Peng, K. Pernstich, T. Shen, A. R. Hight Walker, G. Cheng, C. A. Hacker, C. A. Richter, Qiliang Li, D. J. Gundlach and X. Liang, “ Ultraviolet/ozone treatment to reduce metal-graphene contact resistance”, Appl. Phys. Lett. 102, 183110 (2013)
A. Z. Badwan, Z. Chbili, Y. Yang, A. A. Salman, Qiliang Li and D. Ioannou, “SOI field effect diode DRAM cell: Design and Operation” IEEE Elec. Dev. Lett. 34, 1002 (2013)
Hao Zhu and Qiliang Li et al., “High performance topological insulator Bi2Se3 nanowire field effect transistors” Scientific Report 3, 1757 (2013)
H. Yuan, Qiliang Li, H. Li, D. Ioannou, C. A. Richter, “Single-nanowire CMOS inverter based on ambipolar Si nanowire FETs,” ECS Transactions 50 (6), 151-156 (2013)
D. Ioannou, Z. Chbili, A. Badwan, Qiliang Li, Y. Yang and A. Salman, “Physics and design of nanoscale field effect diodes for memory and ESD protection applications,” Future Trends in Microelectronics: Frontiers and Innovations, 13-80 (2013)
Hao Zhu and Qiliang Li et al., “Self-aligned multi-channel silicon nanowire field-effect transistors” Solid-State Electronics 78, 92-96 (2012)
X. Liang, B. Sperling, I. Calizo, G. Cheng, C. Hacker, Q. Zhang, Y. Obeng, K. Yan, H. Peng, Qiliang Li, X. Zhu, H. Yuan, A. Hight, Z. Liu, L. Peng, C. Richter, “Towards clean and crackles transfer of graphene” ACS Nano 5, 11 (2011)
X. Zhu, Qiliang Li, X. Liang and D. Ioannou et al., “Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells” Nanotechnology (invited) 22, 254020 (2011) (Cover Page)
S. Minnikanti, M. Pereira, S. Jaraiedi, K. Jackson, C. Costa-Neto, Qiliang Li, N. Peixoto, “In vivo electrochemical characterization and inflammatory response of multiwalled carbon nanotube-based electrodes in rat hippocampus” Journal of Neural Engineering, vol. 7, 016002 (2010)
Qiliang Li, X. Zhu, Y. Yang, D. Ioannou, J. Suehle and C. A. Richter, “Silicon nanowire-based nonvolatile memory cells: progress and prospects,” Future Trends in Microelectronics: From nanophotonics to sensors to energy, pp. 201-210, 2010
Qiliang Li, Xiaoxiao Zhu and D. Ioannou et al., "The large-scale Integration of high- performance nanowire field effect transistors" Nanotechnology, vol. 20, pp. 415202 (2009)
X. Zhu, Qiliang Li and D. Ioannou et al., "Silicon nanowire NVM with high-k gate dielectric stack" Microelectronic Engineering, vol. 86, pp. 1957-1960 (2009)
X. Zhu, Qiliang Li, D. Ioannou and C. Richter et. al., "Application of ALD high-k dielectric films as charge storage layer and blocking oxide in nonvolatile memories" ECS Transactions, 25, 473 (2009)
Curt A. Richter, Hao D. Xiong, Xiaoxiao Zhu, Wenyong Wang, Vincent M. Stanford, Woong-Ki Hong, Takhee Lee, Dimitris E. Ioannou, and Qiliang Li, "Metrology for the electrical characterization of semiconductor nanowires" IEEE Transaction on Electron Devices, vol. 55, iss. 11, pg. 3086 (2008). (Invited)
X. Zhu, Y. Yang, Qiliang Li, D. E. Ioannou, J. S. Suehle and C. A. Richter, "Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer" Microelectronics Engineering, vol. 85, iss. 12, pg. 2403 (2008)
C. Choi, W. Cho, S. Koo, S. Kim, Qiliang Li, J. S. Suehle, C. A. Richter, E. M. Vogel, "Three-Dimensional Simulation Study of the Improved On/Off Current Ratio in Silicon Nanowire Field-Effect Transistors" Journal of Korean Physical Society, Vol. 53, No. 3 (2008)
Qiliang Li, "Hybrid Silicon/Molecular Electronics for Memory Application" Modern Physics Letter B vol. 22, pp. 1183 -1202 (2008) (Invited Review Article)
Qiliang Li, S. Koo, C. Richter and E. Vogel et al., "Precise Alignment of Single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures" IEEE Trans. Nano. vol. 6, pp. 256-261 (2007)
Qiliang Li, X. Zhu and D. Ioannou et al., "Silicon Nanowire on Oxide Nitride Oxide for Memory Application" Nanotechnology 18, 235204 (4 pages) (2007)
Qiliang Li, and S. Koo et al., "Silicon Nanowire Electromechanical Switches for Logic Device Application" Nanotechnology 18, 315202 (5 pages) (2007)
H. Xiong, D. Heh, M. Gurfinkel and Qiliang Li et al., "Characterization of Electrically Active Defects in High-K Gate Dielectrics By Using Low Frequency Noise, Charge Pumping, and Fast Id-Vg measurements" Microelectronic Engineering 84, pp.2230 - pp.2234 (2007).
H. Xiong, Wenyong Wang, Qiliang Li, Curt A. Richter and John S. Suehle et al., "Random Telegraph Signals in n-type ZnO Nanowire Field Effect Transistors at Low Temperature" Applied Physics Letter 91, (053107) 2007.
S. Gowda, G. Mathur, Qiliang Li, S. Surthi, and V. Misra, "Hybrid silicon/molecular FETs: A study of the interaction of redox-active molecules with silicon MOSFETs" IEEE Trans. Nano. 5(3), 258-264, 2006
S. Koo, Qiliang Li, M. Edelstein, C. Richter and E. Vogel et al. "Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors" Nano Lett. 5, 2519, 2005
S. Koo, M. Edelstein, Qiliang Li, C. Richter and E. Vogel, "Silicon nanowires as enhancement-mode Schottky-barrier field-effect transistor" Nanotechnology vol. 16, pp. 148 -1485, 2005
S. Gowda, G. Mathur, Qiliang Li, S. Surthi, and V. Misra, "Approach for investigating lateral conduction in self-assembled monolayers" Applied Physics Letters, 87, 26, 2005
Q. Zhao, Y. Luo, S. Surthi, Qiliang Li, G. Mathur, S. Gowda, P. R. Larson, M. B. Johnson, and V. Misra, "Redox-active monolayers on nano-scale silicon electrodes," Nanotechnology, vol. 16, pp. 257-261, 2005.
G. Mathur, S. Gowda, Qiliang Li, S. Surthi, Q. Zhao, and V. Misra, "Properties of functionalized redox-active monolayers on thin silicon dioxide - A study of the. dependence of retention time on oxide thickness," IEEE Transactions on Nanotechnology, vol. 4, pp. 278-283, 2005.
Qiliang Li, G. Mathur, S. Gowda, S. Surthi, Q. Zhao, L. H. Yu, J. S. Lindsey, D. F. Bocian, and Veena Misra, "Multibit memory using self-assembly of mixed ferrocene/porphyrin monolayers on silicon," Advanced Materials, vol. 16, pp. 133, 2004.
Qiliang Li, S. Surthi, G. Mathur, S. Gowda, Q. Zhao, T. A. Sorenson, R. C. Tenent, K. Muthukumaran, J. S. Lindsey, and Veena Misra, "Multiple-bit storage properties of porphyrin monolayers on SiO2," Applied Physics Letters, vol. 85, pp. 1829-1831, 2004.
Z. M. Liu, A. A. Yasseri, R. S. Loewe, A. B. Lysenko, V. L. Malinovskii, Q. Zhao, S. Surthi, Qiliang Li, V. Misra, J. S. Lindsey, and D. F. Bocian, "Synthesis of porphyrins bearing hydrocarbon tethers and facile covalent attachment to Si(100)," Journal of Organic Chemistry, vol. 69, pp. 5568-5577, 2004.
R. S. Loewe, A. Ambroise, K. Muthukumaran, K. Padmaja, A. B. Lysenko, G. Mathur, Qiliang Li, D. F. Bocian, V. Misra, and J. S. Lindsey, "Porphyrins bearing mono or tripodal benzylphosphonic acid tethers for attachment to oxide surfaces," Journal of Organic Chemistry, vol. 69, pp. 1453-1460, 2004.
K. Muthukumaran, R. S. Loewe, A. Ambroise, S. I. Tamaru, Qiliang Li, G. Mathur, D. F. Bocian, V. Misra, and J. S. Lindsey, "Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfaces," Journal of Organic Chemistry, vol. 69, pp. 1444-1452, 2004.
S. Gowda, G. Mathur, Qiliang Li, S. Surthi, Q. Zhao, J. S. Lindsey, D. F. Bocian, and V. Misra, "Modulation of drain current by redox-active molecules incorporated in Si MOSFETs" 2004 International Electron Devices Meeting, Dec. 13-15, Technical Digest, (IEEE Cat. No.04CH37602), pp. 707-710, 2004
Qiliang Li, S. Surthi, G. Mathur, S. Gowda, Veena Misra, T. A. Sorenson, R. C. Tenent, W. G. Kuhr, S. Tamaru, J. S. Lindsey, Z. M. Liu, and D. F. Bocian, "Electrical characterization of redox-active molecular monolayers on SiO2 for memory applications," Applied Physics Letters, vol. 83, pp. 198-200, 2003.
S. Gowda, G. Mathur, Qiliang Li, S. Surthi, Q. Zhao, J. S. Lindsey, K. Mobley, D. F. Bocian, and V. Misra, "Hybrid silicon/molecular memories: co-engineering for novel functionality" 2003 International Electron Devices Meeting, Dec. 8-10,Technical Digest, IEEE International, pp 22.1.1 - 22.1.4, 2003
Qiliang Li, G. Mathur, M. Homsi, S. Surthi, Veena Misra, V. Malinovskii, K. H. Schweikart, L. H. Yu, J. S. Lindsey, Z. M. Liu, R. B. Dabke, A. Yasseri, D. F. Bocian, and W. G. Kuhr, "Capacitance and conductance characterization of ferrocene-containing self-assembled monolayers on silicon surfaces for memory applications," Applied Physics Letters, vol. 81, pp. 1494-1496, 2002.
Qiliang Li, J. Yin, C. Xiao, and Z. Liu, "Enhanced ferroelectric properties of Pb(Ta0.05Zr0.48Ti0.47)O3 thin films on Pt/TiO2/SiO2/Si substrates using La0.67Sr0.33MnO3 buffer layers" J. Phys. D: Appl. Phys., vol. 33, pp. 107-110, 2000.
J. Yin, Qiliang Li, Z. Liu, M. Wang, Z Wu, and T. Yu "Influence of cationic stoichiometry of the bottom electrode La1-xSrxCoO3 on the microstructures of Pb(Ta0.05Zr0.48Ti0.47)O3 ferroelectric films using Pt/TiO2 conducting barrier" Appl. Phys. A, vol. 70, pp. 69-73, 2000.
L. Wang, J. Li, X. Huang, Qiliang Li, X. Yin, W. Fan, J. Xu, W. Li, Z. Li, J. Zhu, M. Wang, Z. Liu and K. Chen, "Surface morphology and structural observation of laser interference crystallized a-Si : H/a-SiNx : H multilayers" APPLIED SURFACE SCIENCE, vol. 165 (2-3), pp. 85-90, 2000.
J. Wu, Q. Cao, K. Gu, Qiliang Li, L. Wang, H. Zhang, Y. Du, and S. Zhang, "The colossal magnetoresistance of (La1-yTby)2/3Sr1/3MnO3 perovskite" ACTA PHYSICA SINICA 48 (2): 370-377 FEB 1999.
L. Wang, T. Ma, X. Huang, J. Xu, Qiliang Li, Z. Wu, and K. Chen "Properties of hydrogenated amorphous silicon carbide films irradiated by excimer pulse laser" ACTA PHYSICA SINICA-OVERSEAS EDITION 7 (12): 930-935 DEC 1998.
A. Z. Badwan, Qiliang Li and D. E. Ioannou, “On the T-RAM and FED-RAM memory mechanism,” SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE, Page 1-2
H. Yuan, M. Pan, G. Cheng, C. A. Richter and Qiliang Li, “Physical and Electrical Properties of Ag Contacts on MoS2,” ECS Transactions 69 (12), 3-15 (2015)
S. Yu, Qiliang Li and K. Eshun, “Effects of Doping, Strain and Size on the Electrical Properties of MoS2 Nanoribbons,” ECS Transactions 64 (12), 25-31 (2014)
H. Zhu, E. Zhao, C. A. Richter and Qiliang Li, “Topological Insulator Bi2Se3 Nanowire Field Effect Transistors,” ECS Transactions 64 (17), 51-59 (2014)
Y. Yang, A. Gangopadhyay, Q. Li, D.E. Ioannou, “Scaling of the SOI field effect diode (FED) for memory application,” Semiconductor Device Research Symposium, 2009. ISDRS'09. International, page 1-2
C. Richter, J. Kopanski, C. Jiang and Qiliang Li et al., “Advanced capacitance metrology for nanoelectronic device characterization,” AIP Conference Proceedings, vol. 1173, pp. 328-332 (2009)
Qiliang Li , X. Zhu, Y. Yang, D. E. Ioannou, H. D. Xiong, J. S. Suehle and C. A. Richter, "Design, Fabrication and Characterization of High-Performance Silicon Nanowire Transistors" Proceeding of the 8th IEEE Nanotechnology conference, Aug. 2008
C. A. Richter, H. D. Xiong, X. Zhu, W. Wang, V. M. Stanford, Qiliang Li, D. E. Ioannou, W. Hong and T. Lee "Measurements for The Reliability and Electrical Characterization of Semiconductor Nanowire" Proceeding of 46th Annual IRPS, June 2008
X. Zhu, Qiliang Li, D. E. Ioannou, W. A. Kimes, J. S. Suehle, J. E. Maslar, H. D. Xiong,
S. Yang and C. A. Richter, "Silicon Nanowire Memory Application Using Hafnium Oxide Charge Storage Layer" Proceeding of ISDRS 2007 December 2007
Qiliang Li, C. Richter and Suehle et al., "Nanowire Electromechanical Logic Switch" Proceeding of the 7th IEEE International Conference on Nanotechnology, pp.141-145, 2007
Qiliang Li and Curt A. Richter et al., "Methods to Characterize the electrical and Mechanical properties of Si Nanowire" AIP proceeding for 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics
H. Xiong, Wenyong Wang, Qiliang Li, Curt A. Richter and John S. Suehle et al., "Random Telegraph Signals and 1/f Noise in ZnO Nanowire Field Effect Transistors" Proceeding of the 7th IEEE International Conference on Nanotechnology, pp.1139-1143, 2007
S. Gowda, G. Mathur, Qiliang Li, S. Surthi, Q. Zhao, J. S. Lindsey, D. F. Bocian, and V. Misra, "Modulation of drain current by redox-active molecules incorporated in Si MOSFETs" 2004 International Electron Devices Meeting, Dec. 13-15, Technical Digest, (IEEE Cat. No.04CH37602), pp. 707-710, 2004
S. Gowda, G. Mathur, Qiliang Li, S. Surthi, Q. Zhao, J. S. Lindsey, K. Mobley, D. F. Bocian, and V. Misra, "Hybrid silicon/molecular memories: co-engineering for novel functionality" 2003 International Electron Devices Meeting, Dec. 8-10,Technical Digest, IEEE International, pp 22.1.1 - 22.1.4, 2003
Created in 2017. Last update: January, 2019.